Polarization-resolved Raman scattering of MoS2 under different coupling strength with substrates

Yu Fan Chiang^1*, Yu Chen Chang¹, Rahul Kesarwani¹, Yi Jie Feng¹, Yann-Wan Lan¹, Ting-Hua Lu¹

¹Department of Physics, National Taiwan Normal University, Taipei, Taiwan

* Presenter:Yu Fan Chiang, email:yufanchiang.alan@gmail.com

We studied the percentage of helicity exchange (or coupling strength) between the monolayer molybdenum disulfide (MoS2) and Si substrate of different structures using polarized Raman spectroscopy. Our in-house modified Raman spectroscopy setup is used for analyzing the optical helicity by calculating the degree of polarization (DoP) at different substrate for linearly and circularly polarized incident light. The experimental results show that the monolayer MoS2 deposited on Si (100)/SiO2 substrate has the maximum percentage of DoP as compared to Si substrates of different structures under linearly and circularly polarized excitation light.

Keywords: helicity exchange, molybdenum disulfide (MoS2), polarized Raman, degree of polarization (DoP), coupling strength