Modified Transmission Line Method (TLM) for accurate contact resistance extraction in ultrathin semiconductors

Tzu Jie Lin^1*

¹電機學院, 國立陽明交通大學, 新竹市, Taiwan

* Presenter:Tzu Jie Lin, email:jay980611@gmail.com

In this work, we provide a revised model to describe the current-voltage characteristic of metal-semiconductor-metal (MSM) junctions. Based on this model, we show that the contact resistance Rc extracted by the transmission line method (TLM) could be overestimated or underestimated depending on the different parameters of the contacts. We provide a calibration to correct the errors in TLM. This method is applicable in any metal-semiconductor-metal junctions that require TLM for the Rc extraction.

Keywords: Transmission line method, contact-resistance extraction, current-voltage characteristic, metal-semiconductor contact, semiconductor physics