Quantum Transport in 2D Materials: Graphene vs MoS₂
Ming-Hao Liu1*
1Department of Physics, National Cheng Kung University, Tainan, Taiwan
* Presenter:Ming-Hao Liu, email:minghao.liu@phys.ncku.edu.tw
The discovery of graphene almost two decades ago opened the era of 2D materials. Despite the novel properties of its relativistic electrons that behave like Dirac fermions, using graphene to make field-effect transistors is practically impossible due to its gapless energy bands linear in momentum. Single-layer molybdenum disulfide (MoS₂), on the other hand, belongs also to the family of 2D materials but behaves the same as a typical semiconductor. This presentation provides quantum transport simulations based on the real-space Green's function method for graphene and MoS₂ in the clean and zero-temperature limit, highlighting the fundamental difference between transport properties of Dirac and Schroedinger electrons. Basic phenomena such as Fabry-Perot interference, Aharanov-Bohm effect, quantum Hall effect, or transverse magnetic focusing in graphene vs MoS₂ will be compared.


Keywords: graphene, molybdenum disulfide, quantum transport