Session Index

MicroLED display is believed to be the next generation of flat panel display. The concept of MicroLED display is simple. It can be considered as an LED video wall but shrunk into consumer product sizes with micro-meter scale LED chips as sub-pixel emitting elements. The reasons to develop MicroLED display are lower energy consumption and better environmental reliability. Current LCD is a light absorbing device, which means most of light from backlight unit is wasted and transformed to heat. This will be a big energy crisis while we use more and more displays. OLED seems can reduce some energy consumption as an emissive display, but it is limited by material lifetime and weak environmental reliability. MicroLED could be a good solution by highly efficient inorganic LED chips. MicroLED display can meet all requirements for high performance display. It can achieve ultra-high resolution, ultra-low power consumption, high brightness, flexible display with any shape, fast response time, and good environmental reliability. MicroLED is the only display technology can fulfill high display quality standard, and we believed MicroLED will be the ultimate display technology. By using PlayNitride proprietary PixeLED® display technology, we have built 3.12” 256x256 pixels and 5” 320x160 pixels full color MicroLED sample. This sample was built by passive matrix backplane, red, green, and blue MicroLED chips, and a passive matrix OLED driver IC. Both displays are transparent with more than 50% transmittance, and high brightness more than 800 nits. MicroLED display is an emerging technology with high brightness, wide color gamut, and high aperture ratio. In additional to traditional display applications, MicroLED display can be used for innovative display technology. Based on our proprietary PixeLEDTM Display technology, we demonstrated two MicroLED displays which can show the ultimate display performance.

 

CdSe/ZnS quantum dots (QDs) and poly(N-vinylcarbazole) polymer material were used to fabricate the emission layer of inverted white organic light-emitting diodes (WOLED). Furthermore, an ITO nanorod with period of 1.5 µm was added. The maximum efficiency was improved to 3.12 cd/A and the CIE of the WOLEDs was (0.329, 0.331).

 

We proposed a lighting lens design with an optical efficiency of 77.6% and optical utilization factor at the region of 36 m × 21 m above 60%. Therefore, the proposed luminaire not only fits the geometrical shape of the sport field but also the regulation of international sport field.

 

To solve the fast anion-exchange phenomenon and further reduce quantum dots(QD) self-aggregation, We used red CdSe/ZnS QD and green perovskite QD to fabricate liquid-type white LED, which achieve outstanding performance of high luminous efficiency, wide color gamut, and high stability.

 

Our study shows contradictory results of the adoption of gate field plates for suppressing current collapse. At the low off-state drain bias, current collapse is deteriorated with the additional gate capacitance. At higher voltage, the effect of gate field plate takes in by re-shaping the vertical electric field distribution.

 

In this study, the Si and Ti co-doped n-type GaN films with ZnO buffer layers were grown by using the sputtering technique on amorphous glass substrates. The Hall measurement results show that Si-Ti co-doped n-type GaN can reduce resistivity of GaN film to 2.63×10-1ohm-cm with carrier concentration of 4.58×1019cm-3