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10:45 - 11:00
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Paper No. 2018-FRI-S0803-O001
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Cheng-Ting Tsai
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Deposition of p-type GaN thin films with Mg and Zn co-sputtering technique on glass substrates
Cheng-Ting Tsai;Wei-Sheng Liu;Yu-Lin Chang;Chun-Yuan Tan
In this study, p-type GaN films were deposited by Mg-Zn co-sputtering with a ZnO buffer layer on amorphous glass substrates. The results of XRD and PL measurements show that the thin films were grown along with c-axis (002) direction with high crystalline quality.
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11:00 - 11:15
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Paper No. 2018-FRI-S0803-O002
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Riza Ariyani Nur Khasanah
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Electrical Properties of InGaN/GaN Multiple Quantum Well Light Emitting Diodes studied by Electric Modulus Spectroscopy
Riza Ariyani Nur Khasanah;Pei-Te Lin;Forest Shih-Sen Chien
The electric modulus (M) spectroscopy was employed to characterize the electrical properties of InGaN/GaN multiple quantum well light emitting diodes. The result showed that we found two main junctions in the device which can be identified as the main active junction and the heterojunction between the AlGaN EBL and p-GaN.
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11:15 - 11:30
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Paper No. 2018-FRI-S0803-O003
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Dai-Jie Lin
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Development of High-power High-thermal Conductivity GaN High Electron Mobility Transistors
Dai-Jie Lin;Yu-Hsuan Lee;Jian-Jang Huang
This research presents a silicon via backend process for AlGaN/GaN-on-Si platform-based devices. The DC characteristics, dynamic measurements and thermal performances are compared between devices with and without backside via. A model proposed was involved into the explanation of heat dissipation mechanism and relation between DC characteristics and thermal effect.
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11:30 - 11:45
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Paper No. 2018-FRI-S0803-O004
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Hui Yu Chen
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Mg/Cu co-doped p-type GaN thin film on glass substrate by using co-sputtering deposition technique
Hui Yu Chen;Wei Sheng Liu Liu;Yu Lin Chang
In this investigation, a p-type Mg/Cu co-doped GaN film was grown by a cosputtering technique at 500°C and 600°C on an amorphous glass substrate with a ZnO buffer layer. In addition, relevant material analyses such as XRD, PL, XPS, and Hall measurement were performed, and they are described herein.
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11:45 - 12:00
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Paper No. 2018-FRI-S0803-O005
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Yu-Lin Chang
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Si-Sn co-doping n- type GaN film on the glass substrate by Sputtering Deposition system
Yu-Lin Chang;Wei-Sheng Liu
In this paper, the Si-Sn co-doped n-type gallium nitride (GaN) films were grown with ZnO buffer layers on amorphous glass substrate by sputtering deposition system. The Hall measurements of Si-Sn co-doped n-GaN film has a low resistance of 1.71×10-1 ohm-cm with high carrier concentration of 1.84×1019 cm-3
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12:00 - 12:15
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Paper No. 2018-FRI-S0803-O006
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Hung-Chung Li
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A Comparison of Optimal White LED Spectra under Mesopic Condition
Hung-Chung Li;Yennun Huang;Pei-Li Sun
The optimal white LED spectra for mesopic lighting condition which are able to raise the mesopic luminance and also expand the range of 3D color gamut with satisfying color rendering indices were discussed. The results suggest that the optimization of trichromatic white LED spectra needs intensive study.
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12:15 - 12:30
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Paper No. 2018-FRI-S0803-O007
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Yu-Chen Shen
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CCT-dependence of Optimal LED Spectra
Yu-Chen Shen;Tzo-Guo Hu;Tsimg-Hsun Yang;Yei-Wei Yu;Ching-Cherng Sun
The optimal LED spectra for the highest CRI of any CCT are obtained. By an empirical spectral function specifying the LED spectra with high accuracy, the optimal LED spectrum can be easily evaluated. Therefore, a series of the optimal LED spectra for the highest CRI of various CCTs is concluded.
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