Session Index

he stratiform metamaterial composed of metal and dielectric thin films exhibits negative index or hyperbolic dispersion through a modified design method based on traditional optical coatings. The associated applications of the stratiform metamaterial including High efficient light absorption, polarization beam splitting, angular insensitive filtering, and plasmonic lithography are proposed here.

 

In the study, novel MoS2 bilayers with the quantum dots were considered for their application as wavelength-sensitive photodetectors. The performance of MoS2 photodetectors was enhanced through the interaction between MoS2 and quantum dots which was be verified as non-radiative energy transfer effect by the analysis of time-resolved photoluminescence.

 

By using the low-power oxygen plasma treatment and an additional re-sulfurization procedure, atomic layer etching (ALE) of multi-layer MoS2 is demonstrated. The weaker adhesion of Mo oxides with MoS2 surfaces is responsible for this phenomenon. By repeating the same ALE procedures, a layer-by-layer etching of MoS2 is demonstrated.

 

We have demonstrated 2D tin (stanene) grown on MoS2/sapphire substrates by using the thermal evaporation. Similar to the formation of single-crystal antimonene, the formation of stanene on MoS2 surfaces have demonstrated the preferential 2D material growth onto each other. The lower contact resistance of stanene/MoS2 interfaces is also demonstrated.

 

We have demonstrated single-crystal triangular WSe2 flakes prepared by using the chemical vapor deposition (CVD). The flake sizes have reached ~100-200 m in widths. The strong photoluminescence (PL) intensity has demonstrated that the flakes are of single-crystal and mono-layer WSe2. Top-gate WSe2 transistors are also demonstrated in this report.

 

Annealed Ge islands were fabricated from thin Ge films deposited by RF sputtering system. The poly-Silicon substrates were polished with different fineness material and buffing by silica solution. The annealed Ge islands were analyzed using Raman spectrum, tapping phase AFM to distinguish Si and Ge.