Session Index

Thin-Film Technology and Optical Engineering

Poster Session I
Friday, Dec. 7, 2018  15:30-17:15
Presider:
Room: R111
Notes:
Paper No.  2018-FRI-P1001-P001
Cheng-Kang Tsai
Award Candidate
Fabrication Process Improvement of Floating-Type VOx Microbolometers
Hsin-Ying Lee;Cheng-Kang Tsai

In this study, adding a central window to the floating-type VOx microbolometers can reduce the plasma etching time from 4 hr 45 min to 2 hr 30 min for removing the sacrificial layer. Which makes the fabrication process more efficient and doesn’t make affect to the device responsivity.

 
 
Paper No.  2018-FRI-P1001-P002
Yi-chin Chen
Award Candidate
Effects of Sputtering Deposition Temperature on Vanadium Dioxide Structure
Yi-chin Chen

We have changed the deposition temperature of vanadium dioxide film deposited by sputtering. The different deposition temperature results in different Raman and AFM results, which corresponds different crystallinity. The obvious change on resistance-temperature (R-T) curve have been found.

 
 
Paper No.  2018-FRI-P1001-P003
Yi-shan Lin
High Efficiency Rare-earth-free Fluorescent Materials and their Application for Fluorescent Micro-Arrays
Yi-shan Lin;Ching-Fuh Lin

We proposed micron-fluorescent arrays with high efficiency rare-earth-element-free solutions that can be applied to micro-LED. The method is to spin the fluorescent film on the substrate and then use photolithography and RIE to make the micron fluorescent array, so mass transfer is not required.

 
 
Paper No.  2018-FRI-P1001-P004
Tsun Min Huang
Award Candidate
Deep-Ultraviolet Zinc-Gallium Oxide Photodetectors Grown by Sputtering
Shiau Yuan Huang;Tsun Min Huang;Shuo Huang Yuan;Sin Liang Ou;Dong Sing Wuu

Deep-ultraviolet photodetectors were fabricated with epitaxial zinc gallium oxide (ZnGa2O4) films by sputtering. The photodetector shows an excellent device performance, where the photocurrent, dark current, and responsivity (@5 V and 240 nm) are measured to be 5.69 × 10−8 A, 5.77 × 10−12 A, and 0.71 A/W, respectively.

 
 
Paper No.  2018-FRI-P1001-P005
Cheng-Chung Jaing
Silicone Film Doped TiO2 , Al2O3 Microparticles Used in Luminescent Solar Concentrators
Yu-Cheng Kung;Chun-Yu Lin;Hsiang-Chieh Hsu;Ting-Yu Chung;Wei-Li Wan;Cheng-Chung Jaing;Bing-Mau Chen

Effects of TiO2, Al2O3 microparticles concentrations doped with the silicone films on the short currents of the solar cell in LSC were investigated. The short current of the solar cell almost increased with an increase of the oxide microparticles concentration.

 
 
Paper No.  2018-FRI-P1001-P006
Wu-Shung Tsai
Award Candidate
Study of Automatic Optical BRDF Inspection for Optical Thin Films
Wu-Shung Tsai

In this study, the bidirectional reflectance distribution function (BRDF) measurement of an automatic optical inspection (AOI) system was discussed. By investigating the BRDF of sample thin film tests, we can improve the capability of detection for the barely-visible defects. Preliminary results of commercial polarizer experiment validated the proposed scheme.

 
 
Paper No.  2018-FRI-P1001-P007
Cheng-jia Tang
Award Candidate
Optical properties of Ti1-xNbxO2 films prepared by reactive magnetron co-sputtering of Ti and Nb targets
Yih-Shing Lee;Cheng-jia Tang;Zi-Zhu Yan;Li-Yang Chung

The influence of oxygen flow ratios and annealing temperature in vacuum on the structure and optical properties TNO films were studied by using X-ray diffraction and energy dispersion spectroscopy, respectively. An excellent average transmittance (~74%) and low reflectivity (~14%) of TNO film at 10% oxygen ratio was obtained.

 
 
Paper No.  2018-FRI-P1001-P008
Hsiu-Ci Li
Award Candidate
Cysteine is Modified on Gold Nanoparticles Film at Different Temperatures Applied for Copper Ions Sensing
Hsiu-Ci Li;Hsueh-Tao Chou;You-Lun Deng;Tien-Ming Wu;Yi-Keng Yu;Wei-Hao Huang

Gold nanoparticles are prepared by using sodium citrate reduction method, and then Cys is modified on AuNPs film at different temperatures. Finally, Cys/AuNPs/ITO film is used for detecting copper ions. The results show that Cys/AuNPs/ITO film modified at high temperatures has a red-shift value of maximum for copper ions sensing.

 
 
Paper No.  2018-FRI-P1001-P009
Kuan Yu Chen
Preparation and Characterization of Indium gallium oxide Phototransistor
Kuan Yu Chen;Chih-Chiang Yang;Yan-Kuin Su;Jian-Long Ruan;Cheng-Chung Lin

In this study, the thin film transistors and their optical properties was investigated with indium gallium oxide (IGO) channel layer which fabricated by using an RF magnetron sputter system. The Iphoto/Idark ratio was 2.1×10^5 and the UV to visible rejection ratio was 6.29×10^3.

 
 
Paper No.  2018-FRI-P1001-P010
Sheng–Po Chang
Fabrication of Indium Tungsten Oxide Ultraviolet Photodetectors with Different Oxygen Partial Pressure
Sheng–Po Chang;Kuan-Yin Chen

An indium tungsten oxide (IWO) ultraviolet photodetector is fabricated with radiofrequency (RF) magnetron sputtering. The devices were depositited with IWO thin films with various oxygen partial pressure ambiences. In this work, the influences of oxygen vacancy concentration are discussed.

 
 
Paper No.  2018-FRI-P1001-P011
Mai Hayamizu
Relationship between Crystal Structure and Mechanical Properties of TiO2 Optical Thin Films
Mai Hayamizu;Hiroshi Murotani

The purpose of this study was to determine what influence crystal structure has on the mechanical characteristics of TiO2 films. Here, we show that the crystal structure influences the hardness of the film.

 
 
Paper No.  2018-FRI-P1001-P012
Yu Ru Lu
Award Candidate
Investigation of residual stress and optical properties on flexible multilayer layer thin film
Yu Ru Lu;Hsi Chao Chen;Chun Hao Chang;Sheng Bin Chen

The anti-reflection coating was deposited on polyethylene terephthalate (PET) by e-beam Evaporator. Using the phase shifting moiré interferometer measured the residual stress of multilayer film in full filed and the stacked film was measured its stress every layer, and analyze optical effect of the residual stress.

 
 
Paper No.  2018-FRI-P1001-P013
Zih-Jie Lin
Annealing Effect on the Properties of P-type ZnO:Bi Thin Film Prepared by Pulsed Laser Deposition
Zih-Jie Lin;Kang Chi;Ting-Wei Lin;Ching-Heng Wang;Wei-Kuan Hung

PLD was used to prepare ZnO:Bi film on C-face sapphire. The characteristics of ZnO:Bi films grown under different doping concentrations, ambient oxygen pressures and annealing conditions were compared in the experiment. XRD results showed that the film grown at 3% target concentration had c-axis orientation and the best crystal quality.

 
 
Paper No.  2018-FRI-P1001-P014
Li-Yang Chuang
Award Candidate
Studies of the characteristics of double layers transparent conductive oxide ITO/TNO thickness combination
Yih-Shing Lee;Li-Yang Chuang;Cheng-jia Tang;Zi-Zhu Yan

The optimum thickness ITO/TNO films deposited on the glass substrate is 80/20nm, reflectance is reduced by 5.06%, the optimum thickness ITO/TNO films deposited on the silicon substrate is 70/30nm, reflectance is reduced by 3.9%. Moreover the reflectance on the silicon substrate was improved in the near-infrared range than the glass.

 
 
Paper No.  2018-FRI-P1001-P015
Hong-Yi Lin
Award Candidate
Relative Humidity Sensor Based on Thin Film Coatings and Lossy Mode Resonance
Chuen-Lin Tien;Hao-Sheng Hao-Sheng Mao Hao-Sheng Mao;Hong-Yi Lin

We present a high-sensitivity relative humidity sensor based on ITO coatings and lossy mode resonance effect. A new humidity sensor has a high sensitivity with D-shaped fiber residual thickness of 73 μm and ITO thin-film thickness of 23 nm. The sensitivity of the proposed humidity sensor is 8.609 nm/%RH.

 
 
Paper No.  2018-FRI-P1001-P016
Shao-Hua Wu
Award Candidate
Properties of N-In codped p-type ZnO film deposited by ultrasonic spray pyrolysis
Shao-Hua Wu;Yao-Te Wang

N-In codoped ZnO films were deposited on Si(100) by UPS. The structural,electrical and optical properties of the ZnO based films were investigated. Results indicated that the best p-type with the resistivity of 0.58Ωcm ,mobility of 3.46 cm2/Vs ,and carrier concentration of 3.11x1018 cm-3 was obtained at 5% In-doped ZnO:N film

 
 
Paper No.  2018-FRI-P1001-P017
Lin yu you
Preparation and characterization of Sb-N codoped p-type ZnO Thin flims
Lin yu you;Wang Yao Te

Sb–N dual-acceptor doped p-type ZnO films were grown on silicon substrates by the spray pyorolized method. The thin films is obtained with the best electrical properties show a hole concentration in the order of 1019cm3 and resistivity 0.557 Ωcm and p-type.

 
 
Paper No.  2018-FRI-P1001-P018
CHUN-YU Lin
Influence of Pulse Duration and Wavelength into the Through Glass Via
CHUN-YU Lin;HSIN-YU CHANG;FU-LUNG CHOU;CHIEN-JUNG HUANG;JIAN-HENG CHEN;ZI-CHENG HUANG;SHEAN-JEN CHEN

An ultrafast laser induces nonlinear absorption effects for laser machining of glass sample, and also adopts a simply photothermal model to study heating process with multiphoton excitation. To understand the phenomenon, we will analyze the photothermal reaction for different excitation wavelength, laser power density, and repetition rate from theoretical model.

 
 
Paper No.  2018-FRI-P1001-P019
Yung-Hung Huang
Ultrafast Pump-Probe Transient Absorption Spectroscopy of Layer Number Controllable TMDCs
Yung-Hung Huang;Po-Cheng Tsai;Yi-Jia Chen;Shih-Yen Lin;Yu-Jung Lu

We present the ultrafast carrier-transfer dynamics in the layer number controllable molybdenum disulfide grown by using rapid sulfurization of pre-deposited metal film. We’ve performed Raman, absorption, photoluminescence, and pump-probe transient absorption spectroscopy to analysis the material properties. We observed monotonically change of carrier-transfer dynamics in 1-layer, 3-layer, 5-layer MoS2 films.

 
 
Paper No.  2018-FRI-P1001-P020
Yoshiki Tsuno
Low-Refractive-Index Thin Films Fabricated by Electron Beam and Sputtering Evaporation
Yoshiki Tsuno;Hiroshi Murotani;Shigeharu Matsumoto

An optical thin film that has a low refractive index and high mechanical strength can be produced by electron beam (EB) deposition and sputtering evaporation.